[1] Parchinskiy P.B., Gazizulina A.S., Nusretov R.A. Spontaneous photomagnetoelectric effect in ferromagnetic GaMnAs epitaxial layers // Condensed Matter and Interphases (2024) v.26(1), с. 111-116
[2] Parchinskiy P.B., Gazizulina A.S., Nusretov R.A. Spontaneous photomagnetoelectric effect in ferromagnetic GaMnAs epitaxial layers // Condensed Matter and Interphases (2024) v.26(1), с. 111-116
[3] Parchinskiy P.B., Nebesniy A.A., Nasirov A.A., Gazizulina A.S., Arslanov A.O., Nusretov R.A., Yuldashev Sh.U. Effect of the doping compensation on the photoluminescence spectra of ZnO doped by nitrogen // IEEE Xplore. Information Science and Communications Technologies ICISCT 2022, Ташкент, 4145720 DOI:10.1109/ICISCT55600.2022.10146781
[4] Parchinskiy P.B., Nasirov A.A., Gazizulina A.S. Anisotropy of carrier transport processes in GaMnAs grown via low temperature molecular beam epitaxy IEEE Xplore. Information Science and Communications Technologies ICISCT 2022, Ташкент, 4145720 DOI: 10.1109/ICISCT55600.2022.10146895
[5] S. Gazizulina, A.A. Nasirov, A.A. Nebesniy, P.B. Parchinskiy, D. Kim. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers // Semiconductors (2021) v.55, №2, p.214-218
[6] B. Parchinskiy, A.A. Nasirov, A.S. Gazizulina, A. Arslanov, Dojin Kim, O.M. Tursunkulov. Anisotropy of transport and magnetotransport properties of GaMnAs epitaxial layers obtained by lowtemperature molecular beam epitaxy // Uzbek Journal of Physics (2021) v.23, №2, p. 27-32
[7] B. Parchinskiy, A.S. Galashina, Dojin Kim. Magnetic anisotropy of GaMnAs epitaxial layer studied by means of anomalous Hall effect measurements // Uzbek Journal of Physics (2017) v.19, №3, p. 143-147
[8] B. Parchinskiy, A.A. Nasirov, S.I. Vlasov, T. Alimov, D.S. Atajanova, Dojin Kim. Temperature dependence of anisotropic magnetoresistance in GaMnAs epilayers // Uzbek Journal of Physics (2013) v.15, №1-2, p.39-43
[9] B Parchinskii, L.G. Ligai, A.A. Nasirov, M.M. Allambergenov, K.A. Ismailov. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics // Surface Engineering and Applied Electrochemistry (2012) v.48, №2, p.175-179
[10] Yu, P.B. Parchinskiy, D. Kim, H. Kim, Y.E. Ihm, D.K. Choi. Effect of Be codoping on the photoluminescence spectra of GaMnAs // Current Applied Physics (2011) v.11 (3), p.735-739
[11] B. Parchinskiy, A.A. Nasirov, L.G. Ligai, M.M. Allambergenov, K.A. Ismailov. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation // Technical Physics Letters (2011) v.37, №8, p.693-695
[12] Y. Bobylev, P.B. Parchinskiy, S.I. Vlasov, E. Landeranta, A.V. Lashkul, C.Y. Fu. Influence of Mg impurity on structural properties of GaMnN semiconducting solid solutions // Uzbek Journal of Physics (2009) v.11 №2, p. 132-135
[13] B. Parchinskiy, F.C. Yu, Y. Cho, D. Kim. Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy // Journal of crystal growth (2009) v.311 (3), p. 941-943
[14] B. Parchinskiy, F. Yu, P.V.C. Sekar, D. Kim. Anisotropy of magnetoresistance in Be Co-doped GaMnAs // Journal of magnetism and magnetic materials (2009) v.321 (7), p.709-711
[15] Yu, C. Gao, P.B. Parchinskiy, S.P.V. Chandra, D.J. Kim, C.S. Kim, H.J. Kim. The Effects of Codoping ofBe and Mg on Incorporation of Mn in GaAs // Korean Journal of Materials Research (2008) v.18 (8),p. 444-449
[16] B. Parchinskiy, A.Y. Bobylev, S.I. Vlasov, F.C. Yu, D.J. Kim. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy // Semiconductors (2007) v.41 №10, p. 1145-1149
[17] B. Parchinskii, L.G. Ligai, KZ Mansurov, S.K. Iulchiev. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface // Technical physics letters (2006) v.31, №4, p. 288-289
[18] B. Parchinskiĭ, S.I. Vlasov, L.G. Ligaĭ. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface // Semiconductors (2006) v.40 №7, p.808-811
[19] Yu, C. Gao, S.Y. Jeong, P.B. Parchinskiy, D. Kim, H. Kim, Y.E. Ihm. Effect of annealing on the electric and magnetic properties of GaMnAs and Be codoped GaMnAs // Journal of Magnetism and Magnetic Materials (2006) v.304 (1), p. e155-e157
[20] Parchinskiy, F.C. Yu, C.X. Gao, S.W. Lee, D.J. Kim, H.J. Kim, Y.E. Ihm. Influence of phase segregation process on transport properties of dilute magnetic semiconductors // Journal of Magnetism and Magnetic Materials (2006) v. 304 (1), p. e137-e139
[21] X. Gao, F.C. Yu, S.Y. Jeong, A.R. Choi, P. Parchinskiy, D.J. Kim, HJ Kim. The magnetic properties of Be codoped GaMnN grown via molecular beam epitaxy// Journal of Magnetism and Magnetic Materials (2006) v.304 (1), p. e158- e160
[22] B. Parchinskiy, F.C. Yu, S.Y. Jeong, C. Gao, D. Kim, H. Kim, Y.E. Ihm. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters // Applied Surface Science (2006) v. 253 (2), 515-518
[23] B. Parchinskiy, F.C. Yu, C. Gao, S.W. Lee, D. Kim, H. Kim, Y.E. Ihm. Transport properties in MnAs precipitated GaMnAs layers // Journal of electroceramics (2006) v.17 (2), p.1047-1050
[24] B. Parchinskii. Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment // Mikroelektronika (2005) v.34 №6, p.356-358
[25] B. Parchinskii, S.I. Vlasov, A.A Nasirov. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass // Semiconductors (2004) v.38. №11, p.1304-1307
[26] I. Vlasov, P.B. Parchinskii, L.G. Ligai. Temperature Dependence of Carrier Generation at the Silicon–Lead-Borosilicate-Glass Interface // Russian Microelectronics (2003) v.32. №2, p.95-96
[27] B. Parchinskii, S.I. Vlasov, L.G. Ligai, O.Y. Shchukina. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO 2 interface // Technical Physics Letters (2003) v.29, №5, p.392-394
[28] B. Parchinskii, S.I. Vlasov, U.T. TurgunovProperties of passivating coatings based on lead borosilicate glass // Inorganic materials (2002) v.38 №6, p.621-624
[29] B. Parchinskii. The effect of γ radiation on the electrical properties of passive coatings based on lead borosilicate glasses // Technical Physics Letters (2002) v.28, №11, p.932-934
[30] B. Parchinskii, S.I. Vlasov. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass // Russian Microelectronics (2001) v.30, №6, p.401-405
[31] B. Parchinskii, S.I. Vlasov, A.A. Nasirov. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation // Technical Physics Letters (2001) v.27 №9, p.786-788
[32] B. Parchinsky, S. Vlasov, R.A. Muminov. K.K. Ismailov, U.T. Turgunov The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures // Technical Physics Letters (2000) v. 26, №5, p.40-45
[33] I. Vlasov, P.B. Parchinskii, B.A. Olmatov. Electronic density of states at the interface between silicon and lead borosilicate glass // Inorganic Materials (2000) v. 36, №5, p. 502-503
[34] I. Vlasov, O. Nigmanov, P.B.Parchinskii, U.T. Turgunov.Effect of the semiconductor-insulator interface on solar cell parameters // Applied solar energy (1999) v.35, №6, p.13-16
[35] I. Vlasov, P.B. Parchinskii, A.A. Nasirov, B.A. Olmatov. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses // Journal of Technical Physics (1999) v.44, №8, p.998-999
[36] B. Parchinskii, S.I. Vlasov, A.A. Nasirov, T.P. Adilov. The Effect of Heat Treatment on the Properties of Multicomponent Passivating Coatings // RUSSIAN MICROELECTRONICS (1997) v.26, №1, p. 53-54
[37] B. Parchinskii, S.I. Vlasov, A.A. Nasirov. Properties of lead borosilicate glasses // Inorganic materials (1996) v.32, №10, p. 1123-1124
[38] B. Parchinskii, S.I. Vlasov, A.A. Nasirov, T.P. Adilov.Investigation of the charge of the insulator and a silicon-lead silicate glass interface// Technical Physics Letters (1996) v. 22, №1, p. 67-68
[39] I. Vlasov, A.A. Nasirov, P.B. Parchinskiy. Influence of the Impurity S on Heat-Stability of MISStructures on the Basis of Silicon // Turkish journal of Physics (1996) v.20 (11), p. 1211-1214
[40] I. Vlasov, A.A. Nasirov, P.B. Parchinskii, V.A. Abduazimov, B.A. Olmatov. MOS structures based on Cs-doped silicon // Technical Physics Letters (1995) v. 21 №7, p. 494-495
[41] B. Parchinskiy, A.A. Nasirov, S.K. Bobokulov, K. Ismaylov. Investigation of inversion charge forming at the silicon-lead-borosilicate glass interface // Uzbek Journal of Physics (2011) v.13, №2, p.119-123