Silikat oynasidagi nanokristallar zaryad tashuvchini lokalizatsiya qilish uchun potentsial quduq sifatida
Annotatsiya
Maqsad. Pishirish jarayonida silikat shishasida o'z-o'zidan paydo bo'ladigan nanokristallar erkin zaryad tashuvchilar lokalizatsiya qilinadigan potentsial chuqurlar sifatida ko'rib chiqiladi. Ushbu potentsial chuqurlarning chuqurligi birinchi marta turli haroratlarda silikat ko'zoynaklarining kristallanish davomiyligiga qarab baholandi. Turli xil kompozitsiyalarning silikat oynasi uchun bunday potentsial chuqurlarning chuqurligi 0,26-0,87 ev ga teng bo'lib chiqdi, optik assimilyatsiya chetida aniqlangan oynaning o'zi oralig'i esa 3 ev dan oshdi. Ko'rinib turibdiki, shisha bo'shliqning optik kengligi potentsial chuqurlarning chuqurligini o'z ichiga olgan o'rtacha qiymatdir. Shu bilan birga, bu chuqurliklar qalin plyonkali rezistorlarning (ruteniy oksidi birikmalari bilan qo'shilgan silikat ko'zoynaklar) elektr o'tkazuvchanligi mexanizmi uchun muhim bo'lib, o'zgaruvchan uzunlikka sakrash uchun sharoit yaratadi (Mott mexanizmi). Nanokristalli strukturaning o'rganilayotgan materialdagi potentsial chuqurlarning chuqurligiga ta'sirini o'rganish, shuningdek, nanozarrachalarning kattaligi va tizimning energiya xususiyatlari o'rtasidagi bog'liqlikni aniqlash.
Materiallar va usullar. Pishirish jarayonida silikat shishasida o'z-o'zidan paydo bo'ladigan nanokristallar erkin zaryad tashuvchilar lokalizatsiya qilinadigan potentsial chuqurlar sifatida ko'rib chiqiladi. Ushbu potentsial chuqurlarning chuqurligi birinchi marta turli haroratlarda silikat ko'zoynaklarining kristallanish davomiyligiga qarab baholandi. Turli xil kompozitsiyalarning silikat oynasi uchun bunday potentsial chuqurlarning chuqurligi 0,26-0,87 ev ga teng bo'lib chiqdi, optik assimilyatsiya chetida aniqlangan oynaning o'zi oralig'i esa 3 ev dan oshdi. Ko'rinib turibdiki, shisha bo'shliqning optik kengligi potentsial chuqurlarning chuqurligini o'z ichiga olgan o'rtacha qiymatdir. Shu bilan birga, bu chuqurliklar qalin plyonkali rezistorlarning (ruteniy oksidi birikmalari bilan qo'shilgan silikat ko'zoynaklar) elektr o'tkazuvchanligi mexanizmi uchun muhim bo'lib, o'zgaruvchan uzunlikdagi sakrashlar uchun sharoit yaratadi (Mott mexanizmi). Maqsad. Nanokristalli strukturaning o'rganilayotgan materialdagi potentsial chuqurlarning chuqurligiga ta'sirini o'rganish, shuningdek, nanozarrachalarning kattaligi va tizimning energiya xususiyatlari o'rtasidagi o'zaro bog'liqlikni aniqlash.
Natijalar. Tadqiqot shuni ko'rsatdiki, nanokristallar hajmining pasayishi potentsial chuqurlarning chuqurligining oshishiga olib keladi, bu kvant o'lchovli ta'sirlar bilan bog'liq. Rentgen strukturasi tahlili nanokristalli strukturaning shakllanishini tasdiqladi va spektroskopik o'lchovlar nanozarrachalarning o'lchamiga qarab energiya darajasining siljishini ko'rsatdi. Raqamli hisob-kitoblar nanokristallarning materialning elektron xususiyatlariga ta'sirini tasdiqlovchi eksperimental ma'lumotlarga mos keladi.
Xulosa. Tadqiqot shuni ko'rsatdiki, nanokristalli struktura potentsial chuqurlarning chuqurligiga ta'sir qiladi, bu kvant o'lchovli effektlarning namoyon bo'lishi bilan bog'liq. Eksperimental va nazariy natijalar nanozarrachalar hajmining pasayishi energiya uzilishining oshishiga va materialning elektron xususiyatlarining o'zgarishiga olib kelishini tasdiqladi. Topilmalar ma'lum energiya xususiyatlariga ega yangi nanostrukturali materiallarni ishlab chiqishda foydali bo'lishi mumkin.
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